Evolution of the crystallographic planes of cone-shaped patterned sapphire substrate treated by wet etchingDECHAO YANG; HONGWEI LIANG; GUOTONG DU et al.Applied surface science. 2014, Vol 295, pp 26-30, issn 0169-4332, 5 p.Article

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Development of etch hillocks on different Si(hkl) planes in silicon anisotropic etchingZUBEL, I; KRAMKOWSKA, M.Surface science. 2008, Vol 602, Num 9, pp 1712-1721, issn 0039-6028, 10 p.Article

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Pattern transferCOBURN, J. W.Superlattices and microstructures. 1986, Vol 2, Num 1, pp 17-25, issn 0749-6036Article

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CONTROLE DES PROCESSUS D'ATTAQUE DES MATERIAUX DANS UN PLASMA A DECHARGE GAZEUSE BASSE TEMPERATUREDANILIN BS; KIREEV V YU; KAPLIN VA et al.1982; PRIB. TEH. EKSP.; ISSN 0032-8162; SUN; DA. 1982; NO 1; PP. 13-29; BIBL. 61 REF.Article

Surface modification of highly oriented pyrolytic graphite by reaction with atomic nitrogen at high temperaturesLUNING ZHANG; PEJAKOVIC, Dusan A; GENG, Baisong et al.Applied surface science. 2011, Vol 257, Num 13, pp 5647-5656, issn 0169-4332, 10 p.Article

CAD for silicon anisotropic etching : Effect of etching products and diffusionTABATA, O.Sensors and materials. 1998, Vol 10, Num 7, pp 425-433, issn 0914-4935Article

Catalytic etching of synthetic diamond crystallites by ironOHASHI, Tatsuya; SUGIMOTO, Wataru; TAKASU, Yoshio et al.Applied surface science. 2012, Vol 258, Num 20, pp 8128-8133, issn 0169-4332, 6 p.Article

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Basics of chemical and electrochemical etchingGABE, David R.Transactions of the Institute of Metal Finishing. 2001, Vol 79, pp 54-56, issn 0020-2967, 4Article

Dislocation-caused etch pits in the neighbourhood of ferric grainsKHALDEEV, G.V; VOLYNTSEV, A.B.Izvestiâ Akademii nauk SSSR. Metally. 1984, Vol 1984, Num 3, pp 134-135, issn 0568-5303Article

The effect of aluminum ions on the DC etching of aluminum foilRYU, Jong-Ho; JONG HYUN SEO; JEONG, Jae-Han et al.Journal of applied electrochemistry. 2004, Vol 34, Num 9, pp 879-884, issn 0021-891X, 6 p.Article

Langmuir probe measurements on CHF₃ and CF₄ plasmas: the role of ions in the reactive sputter etching of SiO₂ and SiSTEINBRUCHEL, C.Journal of the Electrochemical Society. 1983, Vol 130, Num 3, pp 648-655, issn 0013-4651Article